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CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
Spec. No. : C855I3 Issued Date : 2004.09.16 Revised Date : Page No. : 1/4
BTD1857AI3
Description
* High BVCEO * High current capability * Complementary to BTB1236AI3
Symbol
BTD1857AI3
Outline
TO-251
BBase CCollector EEmitter
BCE
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25 Power Dissipation @TC=25 Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 180 160 5 1.5 3 1 10 150 -55~+150 Unit V V V A A W W C C
BTD1857AI3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. 180 160 5 60 30 Typ. 140 27 Max. 1 1 0.6 1.5 320 Unit V V V A A V V MHz pF
Spec. No. : C855I3 Issued Date : 2004.09.16 Revised Date : Page No. : 2/4
Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=160V, IE=0 VEB=4V, IC=0 IC=1A, IB=100mA VCE=5V, IC=150mA VCE=5V, IC=150mA VCE=5V, IC=500mA VCE=5V, IC=150mA VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
Classification of hFE 1
Rank Range P 82~190 Q 120~200 R 180~320
BTD1857AI3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V Tj=125
Spec. No. : C855I3 Issued Date : 2004.09.16 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100
Tj=75 Tj=25
Saturation Voltage---(mV)
Current Gain---HFE
100
Tj=125 Tj=75
Tj=25
10 1 10 100 1000 Collector Current---IC(mA) 10000
10 10 100 1000 Collector Current---IC(mA) 10000
Saturation Voltage vs Collector Current
1000
Tj=25
On Voltage vs Collector Current
1000
Tj=25
Saturation Voltage---(mV)
Tj=125 Tj=75
On Voltage---(mV)
Tj=125 Tj=75
VBE(SAT)@IC=10IB
VBE(ON)@VCE=5V
100 1 10 100 1000 10000 Collector Current---IC(mA)
100 1 10 100 1000 10000 Collector Current---IC(mA)
Power Derating Curve
1.2 Power Dissipation---PD(W) 1 0.8 0.6 0.4 0.2 0 0 50 100 150 200 Ambient Temperature---TA()
BTD1857AI3
Power Derating Curve
12 10 8 6 4 2 0 0 50 100 150 200 Case Temperature---TC()
CYStek Product Specification
Power Dissipation---PD(W)
CYStech Electronics Corp.
TO-251 Dimension
Spec. No. : C855I3 Issued Date : 2004.09.16 Revised Date : Page No. : 4/4
A
B
C D
Marking:
D1857A
F 3 E K 2 1 J G
I H
Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835
Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20
DIM G H I J K
Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165
Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD1857AI3
CYStek Product Specification

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